smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3712 features high voltage: v dss = 250 v gate voltage rating: 30 v low on-state resistance r ds(on) =0.58 max. (v gs =10v,i d =4.5a) low c iss :c iss = 450 pf typ. (v ds =10v,i d =0a) built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 250 v gate to source voltage v gss 30 v i d 9.0 a i dp * 27 a power dissipation t a =25 1.0 t c =25 40 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =250v,v gs =0 10 a gate leakage current i gss v gs = 30v,v ds =0 10 a gate cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 3.5 4.5 v forward transfer admittance y fs v ds =10v,i d =4.5a 3 6 s drain to source on-state resistance r ds(on) v gs =10v,i d =4.5a 0.4 0.58 input capacitance c iss 450 pf output capacitance c oss 100 pf reverse transfer capacitance c rss 40 pf turn-on delay time t on 8ns rise time t r 8ns turn-off delay time t off 21 ns fall time tf 6 ns total gate charge q g 14 nc gate to source charge q gs 3nc gate to drain charge q gd 7nc v dd = 200v v gs =10v i d =9.0a v ds =10v,v gs =0,f=1mhz i d =4.5a,v gs(on) =10v,r g =0 ,v dd =125v smd type smd type smd type ic smd type transistors smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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